应变SOI材料兼具应变Si的载流子高迁移率特性和SOI材料低漏电流、低寄生电容及其他寄生效应、高抗辐照等优异特性，成为高速、低功耗以及抗辐照器件与电路的优选材料技术。随着半导体工艺技术的不断发展，应变SOI技术在提高电路性能与降低功耗方面发挥了越来越重要的作用，同时也对高质量应变SOI材料制备工艺技术提出了新的更高的要求。现有成熟的应变SOI材料技术均基于SiGe虚衬底，存在散热和Ge扩散的问题。因此，研究并开发一种无SiGe虚衬底、高性能晶圆级应变SOI技术具有非常重要的意义。

基于SOI晶圆的结构和材料特性、SiN薄膜的高应力特性、以及材料力学与热学理论，论文提出了基于高应力SiN薄膜无SiGe虚衬底的晶圆级应变SOI制作新方法，并对其应变引入机理、应变保持与记忆机理、应变效应增强机理、应变模型及制作工艺实验等进行了系统和深入的研究。论文的主要研究工作及取得的成果如下：

（1）SOI晶圆的力学特性研究。采用纳米压痕技术，论文对Si晶圆和SiO₂薄膜的材料力学特性进行了实验研究，获得了单晶Si和SiO₂的杨氏模量和硬度力学参数；建立了SOI晶圆材料纳米压痕实验的ANSYS有限元模型，结合实验结果，通过量纲分析法，论文获得了SOI晶圆顶层Si薄膜的屈服强度。

（2）机械致单轴应变SOI的理论与实验研究。

根据梁弯曲理论与SOI晶圆材料弹塑性力学特性，采用单片SOI晶圆方法，论文进行了机械致晶圆级单轴应变SOI的应变引入机理、应变保持机理以及实验研究，获得了-0.168%压应变和0.1554%张应变的晶圆级单轴应变SOI材料，应变效应高于文献报道的采用两片不同尺寸Si晶圆的方法。

SiN薄膜致晶圆级应变SOI的应变引入机理研究。

论文的实验研究发现，若只基于梁弯曲理论， 淀积SiN薄膜的SOI产生的晶圆弯曲不足以产生实验所测得的较大的应变量，说明SiN薄膜的应力一部分使SOI晶圆产生弯曲应变，另一部分则可能使顶层Si产生平面拉伸，引入拉伸应变。根据实验结果，基于SOI晶圆的材料与结构特性、柔顺滑移特性和弹性力学理论，本文提出了高应力SiN薄膜致晶圆级应变SOI的弯曲应变与平面伸缩应变的应变产生机理，并进行了实验验证。实验研究结果表明，制备高应力SiN致张应变SOI晶圆的弯曲应变仅为0.024%，而0.259%的应变是由顶层Si的平面拉伸或压缩应变引起。

（4）SiN薄膜致晶圆级应变SOI应变效应增强方法与机理研究。

基于SOI晶圆的结构特性和离子注入原理，论文提出了高应力SiN薄膜致晶圆级应变SOI的He⁺注入应变效应增强新方法。基于该方法和SOI晶圆的柔顺滑移特性，论文提出并系统阐述了应变增强效应机理，即注入SiO₂-衬底Si界面的He⁺使界面结合强度降低，SOI晶圆的柔顺滑移特性产生了增强效应，导致顶层Si薄膜产生了增强的拉伸或压缩，最终使SOI晶圆的应变得到增强。基于该方法，论文设计并进行了应变增强效应的实验验证。实验结果表明，采用He⁺注入的应变效应增强创新方法，其应变SOI晶圆的应变量最大可以增加约300%。

（5）SiN致晶圆级应变SOI应变保持方法与机理研究。

基于SOI晶圆结构特性和高应力SiN薄膜力学特性，本文提出了SiN致晶圆级应变SOI埋SiO₂层塑性形变的应变保持方法。基于该方法和SOI材料弹塑性力性质，论文提出并系统阐述了其应变保持机理，即由于SiO₂的屈服强度比Si小，同一退火温度和SiN薄膜应力下，SOI晶圆埋SiO₂层受到作用先发生塑性形变，Si仍保持弹性形变；去除SiN薄膜后，受塑性形变埋SiO₂层的拉持作用，弹性形变顶层Si的应变保持不变。基于该方法，设计并进行了应变SOI应变保持机理的实验验证。实验验证研究表明，经650℃退火温度处理和去除-1GPa应力SiN薄膜后，获得了0.3072%应变量的应变SOI晶圆。

（6）SiN致晶圆级应变SOI应变记忆方法与机理研究。

根据局部应变的应变记忆技术的工艺原理，本文提出了顶层Si非晶化重结晶的SOI应变记忆方法。基于该方法和SOI晶圆结构和材料特性，论文提出并阐述了SOI应变记忆效应机理，即非晶化注入的SOI在高温退火过程中，受SiN薄膜应力及埋SiO₂层塑性形变共同作用，将应变引入并记忆到重结晶的顶层Si中。基于该方法，论文对其机理进行了实验验证。研究结果表明，进行了As、Ge离子注入非晶化的SOI顶层Si，在退火重结晶过程中会将SiN薄膜中的应力记忆到顶层Si中。采用该方法，进行了As、Ge注入非晶化顶层Si的SOI晶圆，在重结晶并去除SiN应力膜后，分别获得了0.232%和0.184%的应变量。

（7）高应力SiN薄膜尺度效应与SOI双轴应变转为单轴应变的研究。

根据尺度效应理论，本文开展了SiN薄膜结构特性与应力特性的尺度效应和双轴应变转变为单轴应变的机理研究，重点研究微米/纳米尺度下SiN薄膜的应力弛豫的应力尺度效应行为，提出了双轴应变转变为单轴应变的工艺方法，即将高应力SiN薄膜形成微米或纳米尺度的图形，可使晶圆级双轴应变SOI转变为晶圆级单轴应变SOI。基于该方法和SOI晶圆的材料与结构特性，阐述了晶圆级单轴应变SOI应变机理，并设计实验对其应变机理进行实验验证。偏振拉曼表征研究表明，亚微米宽度SiN条形阵列使顶层Si将受到沿条长方向近似单轴应力作用，最终的SOI晶圆已完全成为晶圆级单轴应变SOI。

（8）基于高应力SiN薄膜的晶圆级应变SOI实验研究。

基于高应力SiN致应变SOI制作方法和应变机理的研究结果，论文进行了应变保持机理、应变增强效应、应变记忆、应变模型、应力尺度效应、以及晶圆级双轴应变和单轴应变SOI制作等实验研究。采用As和Ge离子注入非晶化顶层Si及退火重结晶的工艺方法，获得了0.232%和0.18361%的晶圆级双轴应变SOI材料；采用Si-SiO₂界面He⁺注入的应变增强效应工艺方法，获得了0.3200%的张应变SOI晶圆材料；在此基础上，采用高应力SiN薄膜应力尺度效应的微米级条形图形工艺方法，在SOI中引入了0.6475%的单轴张应变和-0.5957%的单轴压应变; 采用XRD、偏振Raman、HRTEM、AFM等技术，对应变SOI晶圆的结晶质量、双轴应变与单轴应变、缺陷、弯曲度等特性进行了表征。

（9）晶圆级应变SOI应变模型与应力分布计算。

基于曲面结构的弧长理论，本文提出了机械致应变SOI晶圆弯曲应变的弧长模型，该模型具有物理意义清晰、数学表达准确、模型简介等特点；基于机械致应变SOI应变引入机理和弧长模型，论文建立了机械致应变SOI晶圆应变模型。应变模型考虑了弯曲半径和SOI晶圆厚度等关键参数对应变的影响。并采用光纤光栅法和ANSYS有限元仿真，测试和模拟了机械致应变SOI晶圆的应力分布。结果表明，应变模型与光纤光栅实验结果以及ANSYS有限元仿真结果基本一致，验证了应变模型的合理性。

根据高应力SiN薄膜致应变SOI的应变机理，本文建立了高应力SiN致应变SOI晶圆应变模型，模型包括弯曲应变和薄膜拉伸应变两部分。其中弯曲应变模型的基本原理与机械致应变SOI晶圆应变模型相同；薄膜拉伸应变模型考虑了SiN薄膜厚度与应力特性、顶层Si与埋SiO₂层的厚度和杨氏模量等关键因素对应变的影响。模型验证实验表明，模型计算结果与实验结果基本吻合，但由于建立模型的近似假设，模型计算结果较实验结果偏大；建立的ANSYS有限元仿真结果也表明，模型中不同参数对应变量影响的趋势与模拟仿真结果基本吻合，验证了应变模型的合理性。

Strained SOI has the characteristics of high carrier mobility of strained Si and low leakage current, low parasitic capacitance and other parasitic effects, and high radiation resistance of SOI materials. It has became the preferred material technology for high speed, low power consumption and radiation resistant devices and circuit. With the continuous development of semiconductor process technology, strained SOI plays an increasingly important role in improving circuit performance and reducing power consumption. At the same time, it also puts forward new and higher requirements for high-quality strained SOI material preparation process technology. The existing mature strained SOI material technologies are almost based on SiGe virtual substrates, which have the problems of heat dissipation and Ge diffusion. Therefore, research and development of a SiGe-free virtual substrate, high-performance wafer-level strained SOI technology is very important.

Based on the structure and material characteristics of SOI wafer, the high-stress characteristics of SiN film, and the mechanics and thermal theory of materials, a new method for manufacturing wafer-level strained SOI based on high-stress SiN films without SiGe virtual substrate was proposes in this thesis. The mechanism of strain introduction, retention, memory and enhancement have been systematically discuss, and the strain model and experiments of preparation process have been thoroughly researched in this thesis. The main research work and achievements of the thesis are as follows:

(1) Researches on the mechanical characteristics of SOI wafers. Using nano-indentation technology, experimental study on the mechanical properties of Si wafers and SiO₂ thin films was performed, and obtained the Young's modulus and hardness of crystal Si and SiO₂; The ANSYS finite element model of the nano-indentation experiment of SOI wafer was established, combined with the experimental results and dimensional analysis, the yield strength of the top Si film on the SOI wafer was obtained.

(2) Theoretical and experimental research on mechanically induced uniaxial strained SOI.

According to the beam bending theory and the elastoplastic mechanical properties of SOI wafer, experimental and theoretical researches on mechanisms of strain introduction and retention was carried out, uniaxial strained SOI in wafer-level with compressive strain of -0.168% and tensile strain of 0.1554% was obtained, which has a higher strain than the method reported in the literature.

(3) Researches on the mechanism of strain introduction of SiN film-induced strained SOI in wafer-level.

The experimental research of the thesis found that if based only on the beam bending theory, the wafer bending caused by the deposited SiN film on SOI is not enough to produce the larger strain measured in the experiment, indicating that the stress of the SiN film is partly generated SOI wafer bending, the other part may cause the top layer Si to produce plane tension/compression, and introduce tensile/compressive strain correspondingly. According to the experimental results, and based on the characteristics of material, structural, smooth sliding and elastic mechanics of SOI wafer, this thesis proposed the strain mechanism of wafer bending combing with plane stretching for high-stress SiN film induced strained SOI in wafer-leve, and carried out experimental verification. The experimental results show that the bending strain of the high-stress SiN-induced tensile strained SOI wafer is only 0.024%, and 0.259% of the strain is caused by the plane tensile or compressive strain of the top layer Si.

(4) Researches on the method and mechanism of strain enhancement in SiN film-induced wafer-level strained SOI.

Based on the structural characteristics of SOI wafer and the principle of ion implantation, a new method for enhancing the strain effect of wafer-level strained SOI induced by high-stress SiN film through He⁺ implantation was proposed in the thesis. Based on this method and the smooth sliding characteristics of SOI wafer, this thesis proposes and systematically elaborated the mechanism of the strain enhancement, that is, the bonding strength of SiO2-substrate interface could be reduced by He⁺ implanted, and enhanced the smooth sliding characteristics of the SOI which leading to the enhanced stretching or compression of the top Si film, and correspondingly enhanced the introduced strain in the SOI. Based on this method, confirmatory experiment of the strain enhancement was designed and carried out The results show that the introduced strain of SOI can be increased by about 300% with the innovative method of strain enhancement by He⁺ implantation.

(5) Researches on the method and mechanism of strain retention in SOI by highe-stress SiN film.

Based on the structural characteristics of SOI wafer and the mechanical properties of high-stress SiN thin film, the strain-holding method of plastic deformation of buried SiO₂ layer in trained SOI by high-stress SiN film was proposed. Based on this method and the elasto-plastic properties of materials in SOI, this thesis proposes and systematically elaborated the mechanism of strain retention, that is, due to the smaller yield strength of SiO₂ than that of Si, under the same annealing temperature and SiN film stress, plastic deformation of buried SiO₂ occurred, while Si still maintains elastic deformation; after the removal of SiN film, the strain of the top Si remained by the pulling effect of the plastic deformation buried SiO₂ layer. Based on this method, the experimental verification of strain retention mechanism of SOI was designed and carried out. The experimental verification study showed that, after annealing at 650 ℃ and the removal the -1GPa SiN film, strained SOI wafer  with tensil strain of 0.3072% strain is obtained by this method.

(6) Researches on the method and mechanism of strain memory in SOI by highe-stress SiN film.

According to the process principle of the strain memory technology of local strain, a strain memory method of recrystallization of non-crystallized top Si for SiN induced strained SOI was proposed. Based on this method and the structure and material characteristics of the SOI wafer, this thesis proposes and systematically elaborated the mechanism of strain memory, that is, the strain originated from SiN film stress in SOI was introduced into recrystallized top Si during annealing due to the affection of SiN stress and the plastic deformed SiO₂ layer. Based on this method, the thesis experimentally verified its mechanism. The research results showed that As and Ge ions implanted amorphous top Si would memorize the strain introduced by SiN film during the annealing and recrystallization process. Using this method, after recrystallization of top Si and the removal of SiN film, tensile strain of 0.232% and 0.184% were successfully realized in SOI wafer respectively.

(7) Study on the scale effect of high-stress SiN film and the conversion of biaxial strained SOI to uniaxial strained SOI.

According to the theory of scale effect, the study on the structural and the scale effect of stress characteristics of SiN film, and the mechanism of the conversion of biaxial strained SOI to uniaxial strained SOI was presented in this thesis, and focusing on the stress scale effect behavior of SiN film stress relaxation at the micro/nano scale. In this thesis a process method for converting the strain in biaxially strained SOI to uniaxial strained is proposed, that is, with the formation of micron- or nano-scale pattern of high-stress SiN film on top Si, the biaxial strain in wafer-level introduced by SiN film in SOI can transform into uniaxial. Based on the method and the material and structure characteristics of SOI wafer, the strain mechanism of the wafer-level uniaxial strained SOI is expounded and experimentally verified by experiments. Polarization Raman spectra show that the submicron width SiN strip array makes the top layer Si subject to approximately uniaxial stress along the length of the strip. The final SOI wafer has become uniaxial strained SOI in wafer-level.

(8) Experimental study of strained SOI based on high-stress SiN film.

Based on the research results of preparation method and strain mechanism for the high-stress SiN-induced strained SOI, experimental studies for the mechanism of strain retention, strain memory, stress scale effect, and the preparation of biaxial- and uniaxial- strained SOI was carried out in this thesis. Using the process of amorphization top S by As and Ge ions implantation and the process of top Si recrystallization by annealing, biaxially tensile strain of 0.232% and 0.18361% was obtained in SOI in wafer-level; base on the strain-enhancement process of He⁺ implantation at Si-SiO2 interface, strained SOI wafer with tensile strain 0.3200% was realized; On this basis, using the method of micro-scale bar patterned high-stress SiN film which based on principle of the scale effect of SiN film stress, 0.6475% uniaxial tensile strain and -0.5957% uniaxial compressive strain are introduced into SOI; Using XRD, polarization Raman, HRTEM, AFM and other technologies, the characterization of the strained SOI wafer crystal quality, biaxial strain and uniaxial strain, defects, bending and other characteristics were performed.

The strain model and stress distribution calculation of strained SOI in wafer-level.

Based on the arc length theory of curved surface structure, an arc length model of mechanically-induced strained SOI wafer bending strain was proposed in this thesis, which has the advantages of clear in physical meaning, accurate and concise in mathematical expression and modeling etc .; based on the mechanism of strain introduction of mechanically-induced strained SOI and arc length model, the strain model of mechanically strained SOI wafer was established . The strain model takes into account the influence of key parameters such as bending radius and SOI wafer thickness on the strain. The fiber grating method and ANSYS finite element simulation were used to test and simulate the stress distribution of mechanically-induced strained SOI wafer. The results show that the strain model was basically consistent with the results of fiber grating experimental and the ANSYS finite element simulation, which verifies the rationality of the strain model.

According to the strain mechanism of high-stress SiN film-induced strained SOI, the strain model for high-stress SiN-induced strained SOI wafer is established in this thesis. The model includes parts of bending strain and film tensile/compressive strain. The basic principle of the bending strain model is the same as the strain model of mechanically-induced strained SOI wafer; on the other hand, the film tensile/compressive strain model considered the impact of the key factors such as the thickness and stress characteristics of the SiN film, the thickness and Young's modulus of the top Si and the buried SiO₂ layer in SOI wafer. Model verification experiments showed that the model calculation results were basically consistent with the experimental results, but due to the approximate assumptions of the model, the model calculation results wrer all larger than the experimental results; the established ANSYS finite element simulation results also showed that impact of the different parameters in the model on strain were basically agree with the simulation results, which verifies the rationality of the strain model.

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